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| STGP20NB60K N-CHANNEL 20A - 600V - TO-220 PowerMeshTM IGBT PRELIMINARY DATA TYPE STGP20NB60K s s s s s s s s s VCES 600 V VCE(sat) < 2.8 V IC 20 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat ) LOW ON-LOSSES LOW GATE CHARGE HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT VERY HIGH FREQUENCY OPERATION SHORT CIRCUIT RATED LATCH CURRENT FREE OPERATION 3 1 2 TO-220 DESCRIPTION INTERNAL SCHEMATIC DIAGRAM Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH TM IGBTs, with outstanding performances. The suffix "K" identifies a family optimized for high frequency motor control applications with short circuit withstand capability. APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s U.P.S. s WELDING EQUIPMENTS ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM (s) Tsc PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuos) at TC = 25C Collector Current (continuos) at TC = 100C Collector Current (pulsed) Short Circuit Withstand Total Dissipation at TC = 25C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 600 20 20 40 20 80 10 125 1 -65 to 150 150 Unit V V V A A A s W W/C C C June 2000 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/6 STGP20NB60K THERMAL DATA Rthj-case Rthj-amb Rthc-h Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-heatsink Typ 1.0 62.5 0.5 C/W C/W C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) ICES IGES Parameter Collectro-Emitter Breakdown Voltage Collector cut-off (V GE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 A, VGE = 0 VCE = Max Rating, TC = 25 C VCE = Max Rating, TC = 125 C VGE = 20V , V CE = 0 Min. 600 10 100 100 Typ. Max. Unit V A A nA ON (1) Symbol VGE(th) VCE(sat) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE = VGE, IC = 250A VGE = 15V, IC = 20 A VGE = 15V, IC = 20 A, Tj =125C Min. 5 2.3 1.9 Typ. Max. 7 2.8 Unit V V V DYNAMIC Symbol g fs Cies C oes C res Qg Q ge Qgc twsc Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Short Circuit Withstand Time Vce = 0.5 BVces , VGE = 15 V, Tj = 125C , RG = 10 10 VCE = 480V, IC = 20 A, VGE = 15V VCE = 25V, f = 1 MHz, VGE = 0 Test Conditions VCE = 25 V , IC =20 A Min. Typ. 8 1300 200 30 90 T.B.D. T.B.D. Max. Unit S pF pF pF nC nC nC s SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 480 V, IC = 20 A RG = 10 , VGE = 15 V VCC= 480 V, IC = 20 A RG=10 VGE = 15 V,Tj = 125C Min. Typ. 20 70 350 300 Max. Unit ns ns A/s J 2/6 STGP20NB60K ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING OFF Symbol tc tr(Voff) td(off) tf Eoff(**) Ets tc tr(Voff) td(off) tf Eoff(**) Ets Parameter Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Vcc = 480 V, IC = 20 A, RGE = 10 , VGE = 15 V Tj = 125 C Vcc = 480 V, IC = 20 A, RGE = 10 , VGE = 15 V Test Condit ions Min. Typ. 120 35 130 80 0.45 0.6 190 55 160 150 0.75 1.05 Max. Unit ns ns ns ns mJ mJ ns ns ns ns mJ mJ Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) 3/6 STGP20NB60K Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 4/6 STGP20NB60K TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 E mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40 inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 A C D1 L2 F1 D G1 Dia. F2 F L5 L7 L6 L9 L4 G H2 P011C 5/6 STGP20NB60K Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6 |
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